Tunnel Diode And Tunnel Diode Characteristics

 Tunnel diode is made up of degenerative semi-conductormaterials

             Doping concentration is 1:10³ si & ge atoms

       The width of the depletion is 100a⁰_.

           
    
     Tunnel  diode is always is operated in forward bias condition only

·       Tunnel diode is acts as a conductor when it is operated in reverse bias condition v_r increases e_f should be decreased.

  

The performance of tunnel diode is expressed in terms of ratio of peak current to valley current.

      

 i_p/i_v  = 3.5 for si

                          =8  for ge

                      =     15 for gaas

    Making of tunnel diode  gaas is preferred compared to all semiconductors

The width of depletion region is depends on no.of impurities added. Tunnel diode is abrupt junction at both sides are heavily doped.

V_p  ≤  v_d ≤ v_v

Voltage controlled negative resistance is exhibited by tunnel diode

    applications

Microwave oscillators

High speed switch

Adv

Simple to fabricate

Low noise

Environmental immunity

Dis adv

Low output swing

It is two terminal device so it cann’t work as  amplifier